James Hwang

James Hwang

Research Professor
Materials Science and Engineering
Thurston Hall, Room 327
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Biography

James Hwang graduated from the Department of Materials Science and Engineering, Cornell University with a PhD degree. After years of industrial experience at IBM, Bell Labs, GE, and GAIN, he spent most of his academic career at Lehigh University. He cofounded GAIN and QED; the latter became the public company IQE. He used to be a Program Officer at the U.S. Air Force Office of Scientific Research for GHz-THz Electronics. He had been a visiting professor at Cornell University in the US, Marche Polytechnic University in Italy, Nanyang Technological University in Singapore, National Chiao Tung University in Taiwan, and Shanghai Jiao Tong University in China. He is an IEEE Life Fellow and a Distinguished Microwave Lecturer. He is also a Track Editor for the IEEE Transactions on Microwave Theory and Techniques. He has published approximately 400 refereed technical papers and been granted eight U.S. patents. He has researched electronic, optical, and micro-electromechanical devices and circuits. His current research interest includes scanning microwave microscopy, two-dimensional atomic-layered materials and devices, and electromagnetic sensors for individual biological cells.

Research Interests

Electronic, optical, and micro-electromechanical devices and circuits.

Selected Publications

  • P. D. Ye, B. Yang, K. K. Ng, J. Bude, G. D. Wilk, S. Halder, and J. C. M. Hwang, “GaN metal-oxide-semiconductor high-electron-mobility- transistor with atomic layer deposition Al2O3 as gate dielectric,” Appl. Phys. Lett., vol. 86, no. 6, pp. 063501−063503, Feb. 2005.
  • H. L. Stormer, A. Chang, D. C. Tsui, J. C. M. Hwang, A. C. Gossard, and W. Wiegmann, "Fractional quantization of the Hall effect," Phys. Rev. Lett., vol. 50, no. 24, pp. 1953−1956, Jun. 1983.
  • Z. Lin at al, “2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications," 2D Matr., vol. 3, no. 4, pp. 042001-1‒042001-38, Dec. 2016.
  • X. Yuan, J. C. M. Hwang, D. Forehand, and C. L. Goldsmith, “Modeling and characterization of dielectric-charging effects in RF MEMS capacitive switches,” in IEEE MTT-S Int. Microwave Symp. (IMS), Long Beach, CA, Jun. 2005, pp. 753−756.
  • J. C. M. Hwang and R. W. Balluffi, "Measurement of grain-boundary diffusion at low temperatures by the surface accumulation method. I. Methods and analysis," J. Appl. Phys., vol. 50, no. 3, pp. 1339−1348, Mar. 1979.
  • B. J. Skromme, S. S. Bose, B. Lee, T. S. Low, T. R. Lepkowski, R. Y. DeJule, G. E. Stillman, and J. C. M. Hwang, "Characterization of high- purity Si-doped molecular beam epitaxial GaAs," J. Appl. Phys., vol. 58, no. 12, pp. 4685−4702, Dec. 1985.
  • P. C. Chao, P. M. Smith, S. C. Palmateer, and J. C. M. Hwang, "Electron-beam fabrication of GaAs low-noise MESFETs using a new tri-layer resist technique," IEEE Trans. Electron Devices, vol. 32, no. 6, pp. 1042−1046, Jun. 1985.
  • C. J. Wei and J. C. M. Hwang, "Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors," IEEE Trans. Microw. Theory Techn., vol. 43, no. 9, pp. 2035−2040, Sep. 1995.
  • S. H. Wemple, W. C. Niehaus, H. Fukui, J. C. Irvin, H. M. Cox, J. C. M. Hwang, J. V. DiLorenzo, and W. O. Schlosser, "Long-term and instantaneous burnout in GaAs power FET's: mechanisms and solutions," IEEE Trans. Electron Devices, vol. 28, no. 7, pp. 834−840, Jul. 1981.
  • B. S. Ooi, H. S. Djie, Y. Wang, C.-L. Tan, J. C. M. Hwang, X.-M. Fang, J. M. Fastenau, A. W. K. Liu, G. T. Dang, and W. H. Chang, “Quantum dashes on InP substrates for broadband emitter applications,” IEEE J. Sel. Top. Quantum Electron., vol. 14, no. 4, pp. 1230−1238, Jul./Aug. 2008.
  • X. Luo, Y. Rahbarihagh, J. C. M. Hwang, H. Liu, Y. Du, and P. D. Ye, “Temporal and thermal stability of Al2O3-passivated phosphorene MOSFETs,” IEEE Electron Device Lett., vol. 35, no. 12, pp. 1314−1316, Dec. 2014.
  • U. K. Mishra, S. C. Palmateer, P. C. Chao, P. M. Smith, and J. C. M. Hwang, "Microwave performance of 0.25 micron gate length high electron mobility transistors," IEEE Electron Device Lett., vol. 6, no. 3, pp. 142−145, Mar. 1985.
  • X. Yan, W. L. Brown, Y. Li, J. Papapolymerou, C. Palego, J. C. M. Hwang, and R. P. Vinci, “Anelastic stress relaxation in gold films and its impact on restoring forces in MEMS devices,” J. Microelectromech. Syst., vol. 18, no. 3, pp. 570−576, Jun. 2009.
  • Y. Ning, C. Multari, X. Luo, C. Palego, X. Cheng, J. C. M. Hwang, A. Denzi, C. Merla, F. Apollonio, and M. Liberti, “Broadband electrical detection of individual biological cells,” IEEE Trans. Microw. Theory Techn., vol. 62, no. 9, pp. 1905−1911, Sep. 2014.
  • J. C. M. Hwang, "Gradual degradation under RF overdrive of MESFETs and PHEMTs," in IEEE GaAs IC Symp., San Diego, CA, Oct. 1995, pp. 81−84.

Selected Awards and Honors

  • 2023 IEEE EDS Lester F. Eastman Award

  • Distinguished Lecturer (2020-2021), IEEE Microwave Theory and Techniques Society
  • Mentorship Appreciation Award (2019), Lehigh University
  • Mary Shepard B. Upson Visiting Professor in Engineering (2018-2019), Cornell University
  • Distinguished Alumni Award (2018), Department of Materials Science and Engineering, Cornell University
  • Brandt Visiting Professor (2016), Marche Polytechnic University, Ancona, Italy
  • Fellow (1994) and Life Fellow (2015), IEEE
  • Outstanding Contribution Award (2011), Wireless and Optical Communications Conference
  • Faculty Award (2007), IBM
  • Outstanding Achievement Award (2007), Chinese Institute of Engineers
  • Nanyang Professor (1999-2003), Nanyang Technological University, Singapore

Education

  • Ph. D., Materials Science and Engineering, Cornell University (1978)
  • M. S., Materials Science and Engineering, Cornell University (1976)
  • B. S., Physics, National Taiwan University (1970)

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