Department of Materials Science and Engineering

The technology of storing electronic information -- from old cassette tapes to shiny laptop computers -- has been a major force in the electronics industry for decades. Low-power, high-efficiency electronic memory could be the long-term result of collaborative research led by Cornell materials scientist Darrell Schlom. The research, to be published April 17 in the journal Science (Vol. 324 No. 5925), involves taking a well-known oxide, strontium titanate, and depositing it on silicon in such a way that the silicon squeezes it into a special state called ferroelectric -- a result that could prove key to next-generation memory devices.

Read the entire story in the Cornell Chronicle.