Unless otherwise noted, all seminars are at 4:30 pm in 140 Bard Hall.
Refreshments are served at 4 pm in the Bard Lounge.
2009-11-19
Prof. Robert Hull
Rensselaer Polytechnic Institute
I will describe how the focused ion beam (FIB) can be used for controlled fabrication and doping of novel semiconductor nanostructures, with application to potential nanoelectronic architectures. Specific examples include nanoscale templating of epitaxial Ge quantum dots and quantum dot molecules on Si(100) surfaces, and fabrication of metal and insulator core-shell structures on semiconductor nanowires. We are also developing methods for electronic and magnetic functionalization of these nanostructures using a massselected FIB, where ions of different species can be separated from liquid metal alloy sources (e.g. Si from AuSi, B and As from PdAsB, and Mn and Ge from MnGe). It will also be shown how the FIB can elucidate the detailed geometrical and chemical relationships in three-dimensional nanostructure arrays using in-situ tomography techniques.
Work in collaboration with D. Bearud, J. Murphy (RPI); J. Floro, J. Graham, L. He, J. Thorp (U. Virginia), J. Gray (U. Pittsburgh), F. Ross (IBM), M. Gherasimova (U. South CT) A. Portavoce (CNRS-Marseilles), J. Jonasson (U. Lund)
For more information about Prof. Hull's research, click here.